| 摘要 |
PURPOSE:To reduce the need for a fine processing in the manufacture of a semiconductor device by a method wherein the surface of a single crystal semiconductor substrate is exposed, opening parts are demarcated, first conductive regions and first semiconductor single crystal structures are formed in the vicinities of the opening parts and a second conductive region and the like are formed on the first semiconductor single crystal structures. CONSTITUTION:Open demarcating members 4 and 5a and 4 and 5b are arranged on both sides of a first insulating region 2 and opening parts 3a and 3b are respectively demarcated between the region 2 and the members 4. First semiconductor single crystal structures 6a and 6b are selectively made to form on the surface of a single crystal semiconductor substrate 1. The structures 6a and 6b respectively come into contact with the first conductive regions 5a and 5b and respectively come into contact electrically with the first conductive regions 5a and 5b. A second conductive region 7 is epitaxially grown on the surfaces of one pair of the structures 6a and 6b and moreover, a second semiconductor single crystal structure 8 is epitaxially grown on the surface of the region 7. |
