发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To increase an operating speed without increasing a whole area by removing a dead space. CONSTITUTION:On the intersecting part between the line of word driving circuit and the line of sense circuit parts, first driving circuits (Da11, Da12) assigned for driving sense amplifier circuits (SA11-SA13) of sense circuit parts (SC11-SC13) and second driving circuits (Db11, Db12) assigned for driving precharging circuits (PC11-PC13) and transfer circuits (TG11-TG13) are alternately and successively arranged. A set of the first and the second driving circuits drives one sense circuit part.
申请公布号 JPH06176571(A) 申请公布日期 1994.06.24
申请号 JP19920321745 申请日期 1992.12.01
申请人 NEC CORP 发明人 FUJITA MASAMORI
分类号 G11C11/407;G11C5/02;G11C11/401;G11C11/409;G11C11/4091;G11C11/4094;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/407
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