| 摘要 |
PURPOSE:To make the transistors in a bit line load circuit thin film transistors for narrowing chip space by a method wherein a drain region side is connected to the bit lines to provide a gate electrode thin film formed opposing to a channel region through the intermediary of an insulating film. CONSTITUTION:Transistors comprising a bit line load circuit are formed on bit lines BL1, BL2 through the intermediary of an insulating layer 32 so that respective source, channel, drain regions S, C, D, may be successively formed from a power supply line PL side on a polycrystalline silicon thin film 34 extending from the power supply line PL in power supply potential Vcc. Next, thin film transistors TQ11, TQ12 provided with a thin film formed gate electrode G whose drain region D side is connected to corresponding bit lines BL1, BL2 opposing to the channel region C through the intermediary of the insulating layer 32 further connecting to the opposite bit lines are formed. In such a constitution, the thin film transistors TQ11, TQ12 can eliminate the polycrystalline silicon and contact CT used for the power supply line PL thereby enabling the chip space to be narrowed. |
