发明名称 WIRE BONDING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p>The pressure of bonding wire to a pad is controlled by two steps and ultra-sonic and bonding time is controlled appropriately so that crack and cratering are decreased. The method comprises the steps of: (a) forming a metal ball at the end of bonding wire; (b) pressing the metal ball to a bonding pad with a first pressure during a certain time; (c) pressing the metal ball to a bonding pad with a second pressure during a certain time; (d) rubbing the metal ball to a bonding pad; and (e) lifting a capillary and cutting a wire to a certain length.</p>
申请公布号 KR940005716(B1) 申请公布日期 1994.06.23
申请号 KR19910020822 申请日期 1991.11.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAE - HYOK;PARK, SONG - SHIL
分类号 H01L21/60 主分类号 H01L21/60
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