发明名称 |
Testing and repairing process for memory chips on a wafer, each chip having a redundancy circuit |
摘要 |
<p>Disclosed a wafer testing process of a semiconductor device provided with a redundancy circuit. The process comprises a step of removing a passivation film above a pad and link portion, a pre-laser testing, a laser-repairing, and a final quality marking of a off-line inking method. Therefore, fabrication-test processes are simplified to one step by adopting off-line inking method, thereby achieving productivity improvement, quality enhancement, and reduction of throughput time. <IMAGE></p> |
申请公布号 |
EP0602271(A1) |
申请公布日期 |
1994.06.22 |
申请号 |
EP19920121508 |
申请日期 |
1992.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
MOON, HONG-BAE;KU, BON-YOUL;SONG, GI-SEUNG;SEO, TAE-WOOK |
分类号 |
G01R31/28;H01L21/66;H01L21/82;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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