发明名称 Testing and repairing process for memory chips on a wafer, each chip having a redundancy circuit
摘要 <p>Disclosed a wafer testing process of a semiconductor device provided with a redundancy circuit. The process comprises a step of removing a passivation film above a pad and link portion, a pre-laser testing, a laser-repairing, and a final quality marking of a off-line inking method. Therefore, fabrication-test processes are simplified to one step by adopting off-line inking method, thereby achieving productivity improvement, quality enhancement, and reduction of throughput time. <IMAGE></p>
申请公布号 EP0602271(A1) 申请公布日期 1994.06.22
申请号 EP19920121508 申请日期 1992.12.17
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 MOON, HONG-BAE;KU, BON-YOUL;SONG, GI-SEUNG;SEO, TAE-WOOK
分类号 G01R31/28;H01L21/66;H01L21/82;H01L23/544;(IPC1-7):H01L21/66 主分类号 G01R31/28
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