| 发明名称 |
Layered capacitor structure for a dynamic random access memory device |
| 摘要 |
An improved method and resulting structures for producing a layered capacitor structure of memory cell of a DRAM device wherein a doped polysilicon spacer operates as a dopant source for an overlying polysilicon layer on the vertical and sharply inclined surfaces.
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| 申请公布号 |
US5323037(A) |
申请公布日期 |
1994.06.21 |
| 申请号 |
US19930042642 |
申请日期 |
1993.04.05 |
| 申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
SU, WEN-DOE |
| 分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 地址 |
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