Prodn. of hole structure in silicon substrate - by producing pores in substrate by etching, forming mask on substrate and selectively etching

摘要

Prodn. of a hole structure in a silicon substrate comprises (a) producing pores (4) in the substrate (1) of monocrystalline n-doped Si by electrochemical etching in an electrolyte in contact with a 1st surface (2) of the substrate (1), in which the substrate is connected as anode and a current density affecting etch removal is adjusted, the pores corresponding to the depth of the hole structure (6), (b) producing a mask (5) on the 1st surface of the substrate (1), defining the cross-section of the hole structure (6) parallel to the 1st surface (2), and (c) selectively etching, in which the hole structure (6) is formed by removing the silicon forming the side walls of the pores (4) not covered by the mask (5). ADVANTAGE - The pore depth corresponds to the depth of the hole structure.