| 摘要 |
The invention relates to a method and device for preparing implant surfaces of metallic or ceramic material, preferably titanium, using gas-discharge plasma with the aim of obtaining a well-defined and reproducible implant surface. After machining and any washing procedures which may be necessary, the implants (2) are conveyed to a vacuum chamber (K2) in which the plasma preparation is carried out in two steps. Firstly, a treatment with an inert gas plasma is effected so that existing surface contamination layers and oxide layers are removed from the implant. A reoxidation is then effected using an oxidizing plasma or by means of thermal oxidation. The plasma preparation and any remaining preparation steps which may be necessary, and handling of the implants (2), are carried out in accordance with a closed procedure without intermediate exposure to uncontrolled environmental atmospheres. In this way, a higher grade of controlled surface characteristics and reproducibility is obtained for the surface of the implant as compared with previously used methods. The properties of the plasma-prepared surface can be preserved right up to the moment of use. |
