Integrated circuit fabrication.

摘要

A method of fabricating integrated circuits is disclosed. A layer of doped silicon dioxide (e.g., 25) is deposited over a partially fabricated integrated circuit. The doped silicon dioxide (e.g., 25) is heated to permit it to attract sodium ions. After the doped silicon dioxide has been heated, it is removed by an etching process which exhibits great selectivity to the remaining underlying portion of the integrated circuit.