发明名称 MANUFACTURING METHOD OF MOSFET
摘要 The method of fabricating MOS transistor includes the steps of forming a SiOxNy layer on a semiconductor substrate through low pressure chemical vapor deposition in an apparatus, growing polysilicon in the same apparatus, and performing cleaning process, preventing leakage current and improving reliability.
申请公布号 KR940005294(B1) 申请公布日期 1994.06.15
申请号 KR19910012284 申请日期 1991.07.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YUN - KI;KIM, BYONG - RYOL
分类号 H01L21/335;(IPC1-7):H01L21/335 主分类号 H01L21/335
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