发明名称 |
MANUFACTURING METHOD OF MOSFET |
摘要 |
The method of fabricating MOS transistor includes the steps of forming a SiOxNy layer on a semiconductor substrate through low pressure chemical vapor deposition in an apparatus, growing polysilicon in the same apparatus, and performing cleaning process, preventing leakage current and improving reliability.
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申请公布号 |
KR940005294(B1) |
申请公布日期 |
1994.06.15 |
申请号 |
KR19910012284 |
申请日期 |
1991.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YUN - KI;KIM, BYONG - RYOL |
分类号 |
H01L21/335;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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