| 摘要 |
PURPOSE:To provide a semiconductor device in which the channel length of a transfer transistor can be extended while the occupation area of the memory cell of an SRAM is maintained. CONSTITUTION:A memory cell crosses a first branch word line WL1 and a second branch word line WL2, a first active region 11a which crosses the first branch word line WL1 and is the extention of the second branch and a second active region 11b which crosses the second branch word line WL2 and is extension of the first branch word line WL1 and crosses the first active region 11a with an insulating film therebetween in the gate part of a first driver transistor T2. The memory cell also includes a memory cell which contains a first gate electrode 12a which is the extention of the second active region 11b and is connected to the second active region 11b and a second gate electrode 12b which crosses the second active region 11b with an insulating film therebetween and which is the extention of the first active region 11a and is connected to the first active region 11a. |
