发明名称 |
Vertical MOSFET having trench covered with multilayer gate film |
摘要 |
A vertical MOSFET includes a trench whose inner surface is covered with an insulating layer having a multilayer structure. In order to reduce a change in a gate threshold voltage, and equivalent silicon dioxide thickness of the gate insulating layer and a radius of curvature of an upper corner of the trench are provided such that a dielectric breakdown electric field strength of the gate insulating layer at the upper corner is in the range of 2.5 MV/cm to 5.0 MV/cm.
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申请公布号 |
US5321289(A) |
申请公布日期 |
1994.06.14 |
申请号 |
US19930139142 |
申请日期 |
1993.10.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BABA, YOSHIRO;YANAGIYA, SATOSHI;MATSUDA, NOBURO;HIRAKI, SHUNICHI |
分类号 |
H01L29/423;H01L29/51;H01L29/78;(IPC1-7):H01L29/78;H01L29/10 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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