发明名称 Circuit for generating an internal source voltage
摘要 A circuit for generating an internal source voltage which is applied to the memory elements of a semiconductor device. The circuit includes a reference voltage generating circuit for generating a reference voltage, a comparator for comparing the internal source voltage with the reference voltage, a driver for driving an external source voltage into the internal source voltage under the control of the comparator, and a low reference voltage generating circuit for generating a control signal to fully turn on the driver when the voltage level of the external source voltage is lower than the voltage level of the reference voltage generating circuit and which prevents the driver from receiving the output signal of the comparator so as to apply the external source voltage to the memory element of the memory device.
申请公布号 US5321653(A) 申请公布日期 1994.06.14
申请号 US19930035761 申请日期 1993.03.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SUH, YOUNG-HO;KIM, SUK-BIN
分类号 G01R31/28;G05F1/565;G11C5/14;G11C11/401;G11C11/407;G11C11/413;G11C29/00;G11C29/06;(IPC1-7):G11C5/14;G05F13/16 主分类号 G01R31/28
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