| 摘要 |
PURPOSE:To provide a semiconductor device manufacturing method by which the surface areas of storage node electrodes can be easily and efficiently increased at the time of increasing the memory capacity of a DRAM using a stacked capacitor. CONSTITUTION:After forming an amorphous silicon film pattern 113a composed of a first amorphous silicon film, an amorphous silicon film spacer 114a is formed by etching back a second amorphous silicon film 114 formed on the entire surface of a substrate and crystal grains of silicon 115 are formed on the exposed surfaces of the pattern 113a and spacer 114a. Storage node electrodes 116a are constituted of the crystal grains of silicon 115, pattern 113a, and spacer 114a. |
