| 摘要 |
PURPOSE:To realize multi-wavelength light emission, by a method wherein a film composed of material in which epitaxial growth is not generated is formed on a single-crystal semiconductor light-emitting element, and a light- emitting element which has a P-N junction and a PIN junction in the inside is formed on the film. CONSTITUTION:An N-GaP layer 2 doped with N, and a P-GaP layer 3 are formed in order on a single crystal N-GaP substrate 1 by an LPE method. By a CVD method, an SiO2 film 4 of 0.5mum in thickness is formed, on which about 30mum diameter grains composed of AlGaAs are grown. A P-type polycrystalline AlGaAs layer 5 and an N-type polycrystalline AlGaAs layer 6 are successively grown. An N-type electrode 10 and a P-type electrode 9 are formed on the surface of polycrystalline AlGaAs layer 6 are formed. A P-type electrode 8 is formed on the P-type GaP layer 3. When a forward direction bias is applied across the electrodes 7-8, green light of wavelength 550nm is emitted. When a forward direction bias is applied across the electrodes 9-10, red light is emitted from a region 12. |
