| 摘要 |
PURPOSE:To make it possible for the irradiation light on a region to contribute to power generation, by forming the region containing opposite conductivity type impurities so as to be continuous to a region containing opposite conductivity type impurities of one main surface side, on the side surface of a semiconductor substrate and on the peripheral part of the other main surface side. CONSTITUTION:On the surface side of a semiconductor substrate 1, on the side surface part, and on the peripheral part of the rear side, regions (N-layers) 1a, 1c containing opposite type impurities like phosphorus are continuously formed. A surface electrode 2 is formed on the surface side of the semiconductor substrate 1. A rear electrode 3 is formed in the central part of the rear side. No electrodes are formed on the side surface part of the substrate 1, and on the region 1c containing opposite conductivity type impurities which is formed on the side surface part of the substrate 1 and on the peripheral part of the rear. Opposite conductivity type impurities are included in the surface part except the central part of the rear side of the substrate 1 containing impurities of a conductivity type, and the surface electrode 2 is formed only on the surface side of the substrate 1. Hence the irradiation light on the surface side part and on the peripheral part of the rear side also can contribute to power generation.
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