| 摘要 |
PURPOSE:To allow determination whether drain-source withstand voltage is higher than Zener voltage without requiring any bonding pad. CONSTITUTION:A series circuit of a Zener diode 16 and a MOSFET 17 for inspection is connected between drain terminal D and gate terminal G of a power MOSFET 15. Gate of the MOSFET 17 for inspection is connected through a resistor 32 with a source terminal S and an inspection terminal X where a wafer inspection pad is formed. Upon application of a control voltage Va to the inspection terminal X, the MOSFET 17 for inspection is turned OFF and an inspection voltage V higher than a voltage (VZ+Va+VTP) can be applied to the drain terminal D of the power MOSFET 15. |
