发明名称 Wideband BiCMOS operational amplifier - has reference voltage generator, differential amplifier, current source with cascode transistor and modified bipolar Wilson current mirror
摘要 The operational amplifier includes second and third npn-bipolar transistors (MP25,MP15) whose emitters are respectively connected to a reference potential generator (RSG) via emitter resistors (R21,R11). The bases of the second and third non-bipolar transistors are connected to the collector of the third npn-bipolar transistor (Q14). The second connection of a second p-channel MOS transistor is connected to the base of a first npn-bipolar transistor and to the second connection of a fourth p-channel MOS transistor. The gate of a sixth p-channel MOS transistor is supplied with a second reference voltage. ADVANTAGE - Has low number of transistors, saving chip area and minimising internal capacitance, increasing amplification characteristics, e.g. bandwidth, and reducing losses.
申请公布号 DE4240736(A1) 申请公布日期 1994.06.09
申请号 DE19924240736 申请日期 1992.12.03
申请人 SIEMENS AG, 80333 MUENCHEN 发明人 NEBEL, GERHARD, DIPL.-ING., 8970 IMMENSTADT;KLEINE, ULRICH, DR.-ING., 8025 UNTERHACHING
分类号 H03F3/30;H03F3/45;(IPC1-7):H03F3/45;H03M1/00;H03H17/00 主分类号 H03F3/30
代理机构 代理人
主权项
地址