发明名称 |
Wideband BiCMOS operational amplifier - has reference voltage generator, differential amplifier, current source with cascode transistor and modified bipolar Wilson current mirror |
摘要 |
The operational amplifier includes second and third npn-bipolar transistors (MP25,MP15) whose emitters are respectively connected to a reference potential generator (RSG) via emitter resistors (R21,R11). The bases of the second and third non-bipolar transistors are connected to the collector of the third npn-bipolar transistor (Q14). The second connection of a second p-channel MOS transistor is connected to the base of a first npn-bipolar transistor and to the second connection of a fourth p-channel MOS transistor. The gate of a sixth p-channel MOS transistor is supplied with a second reference voltage. ADVANTAGE - Has low number of transistors, saving chip area and minimising internal capacitance, increasing amplification characteristics, e.g. bandwidth, and reducing losses.
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申请公布号 |
DE4240736(A1) |
申请公布日期 |
1994.06.09 |
申请号 |
DE19924240736 |
申请日期 |
1992.12.03 |
申请人 |
SIEMENS AG, 80333 MUENCHEN |
发明人 |
NEBEL, GERHARD, DIPL.-ING., 8970 IMMENSTADT;KLEINE, ULRICH, DR.-ING., 8025 UNTERHACHING |
分类号 |
H03F3/30;H03F3/45;(IPC1-7):H03F3/45;H03M1/00;H03H17/00 |
主分类号 |
H03F3/30 |
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