发明名称 |
FORMING A LAYER |
摘要 |
The method comprises depositing a layer (10) of a material (10) on the surface of an article (1) such that the layer (10) covers the mouth of a recess (3) leaving a void below the closed mouth. Subsequently, without elevating their temperature, the article (1) and layer (10) are subjected to elevated pressures (e.g. pressurised liquid) sufficient to cause the layer (10) to deform into the recess (3). Furthermore, the invention provides a method for forming a layer on such a surface, using the technique of magnetron sputtering and heating the article to increase the mobility of the deposited material. Also provided is apparatus for use in carrying out these methods, which methods are of particular use in the processing of semiconductor wafers. |
申请公布号 |
WO9413008(A2) |
申请公布日期 |
1994.06.09 |
申请号 |
WO1993GB02359 |
申请日期 |
1993.11.16 |
申请人 |
ELECTROTECH LIMITED;DOBSON, CHRISTOPHER, DAVID |
发明人 |
DOBSON, CHRISTOPHER, DAVID |
分类号 |
H01L21/285;H01L21/00;H01L21/3205;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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