| 摘要 |
In a microwave oscillator device, wires (1,2,3 etc) form inductors in a feedback path between a control electrode (e.g. gate) and a second main electrode (e.g. source) of a transistor (e.g. a GaAs MESFET). The transistor body (10) is mounted within an insulating surround 25, on a base 21 providing a first device terminal. The connection to the second main electrode comprises in series at least first and second lengths (1,2) of wire, whereas the connection to the control electrode comprises a third length (3) of wire. The invention permits the construction of a mechanical and electrical replacement for a Gunn diode by compressing the wire lengths (1,2,3 etc) in a particular arrangement into the small space inside a conventional Gunn diode envelope (20). The first wire length (1) and possibly more lengths are arched onto a low bonding area (15,16,17) adjacent the base (21), where the second and third wire lengths extend upto an upper bonding area (23) adjacent the top of the surround (25) and connected to the second terminal (22). The resulting inductance of the connection (1,2, and possibly 4) between the second main electrode and the second terminal (22) is higher than the inductance of the connection (3) between the control electrode and the second terminal (22), whcih provides an impedance level equivalent to that of the Gunn diode which the device replaces. |
