| 发明名称 |
Chemical-vapor-deposition-produced silicon carbide. |
| 摘要 |
<p>beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400-1500 DEG C range, pressure 6.7kPa or less, H2/methyltrichlorosilane molar ratios of 4:-30: 1 and a deposition rate of 1 mu m or less. <IMAGE></p> |
| 申请公布号 |
EP0599468(A1) |
申请公布日期 |
1994.06.01 |
| 申请号 |
EP19930307966 |
申请日期 |
1993.10.07 |
| 申请人 |
CVD INCORPORATED |
发明人 |
GOELA, JITENDRA S.;TAYLOR, RAYMOND L.;BURNS, LEE E. |
| 分类号 |
C01B31/36;B28B1/30;C04B35/565;C04B35/571;C23C16/01;C23C16/32;C23C16/44;(IPC1-7):C23C16/32;C04B35/56;C30B25/02 |
主分类号 |
C01B31/36 |
| 代理机构 |
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代理人 |
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