发明名称 |
C-MOS thin film transistor device manufacturing method |
摘要 |
A method for manufacturing a C-MOS thin film transistor device has the steps of implanting the n-type impurity only in the upper layer portion of the source-drain section of the n-channel transistor by controlling implantation energy of the n-type impurity; implanting the p-type impurity in the source-drain section and the gate electrode of the p-channel transistor, and the source-drain section and the gate electrode of the n-channel transistor by controlling implantation energy of the p-type impurity; and activating the implanted n-type and p-type impurities in the source-drain section of the n-channel transistor, and activating the implanted p-type impurity in the source-drain section and the gate electrode of the p-channel transistor and gate electrode of the n-channel transistor. The n-type and the p-type may be respectively changed to the p-type and the n-type in the above construction.
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申请公布号 |
US5316960(A) |
申请公布日期 |
1994.05.31 |
申请号 |
US19930078409 |
申请日期 |
1993.06.17 |
申请人 |
RICOH COMPANY, LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS CO., LTD. |
发明人 |
WATANABE, HIROFUMI;TERAO, NORIYUKI |
分类号 |
H01L21/84;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/84 |
代理机构 |
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主权项 |
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地址 |
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