| 摘要 |
PURPOSE:To improve the luminance and life of an AlGaInN light emitting diode. CONSTITUTION:The title luminous element consists of an n-layer made of n-type gallium nitride (GaN) and i-layer made of i-type gallium nitride with p-type impurities added. The i-layer 5 consists of a large number of laminated thin films wherein the p-type impurity concentration is stepwise increased in the direction away from the junction with the n-layer 4. The i-layer 5 may be so structured that the p-type impurity concentration is gradually increased therein. The Zn concentration is varied within the range of 1X10<15>/cm<3>-2.0X10<21>/cm<3>. The structure mentioned above improves the electron injection efficiency, luminance and element life. |
