| 摘要 |
<p>PURPOSE:To selectively erase only a necessary part in a latch and to attain write-in in the part by dividing a flash-memory area plural combinated block in which an erasure 1 in a latch and a write-in are performed. CONSTITUTION:The flash-memory area 1 is divided into plural unit block memories UB0 to UB7, switches SW0 to SW7 changing over the erasure in a batch/ write-in are provided on each block memory. Furthermore, combinated 0 to 3 comprising an unit of an erasure in a batch write-in including at least one of unit block memories UB0 to UB7 are determined. Then, the esasure in a batch/write/in in an combinated block unit are attained by the operation of changing over the switch belonging to each unit block constituting an combinated block for an erasing objection selected among combinated blocks 0 to 3.</p> |
