| 摘要 |
PURPOSE:To eliminate the local abnormality in the film thickness of the phase shifter film of a phase shift mask. CONSTITUTION:After the phase shifter film 13 is formed on a glass substrate 11 and light shielding film patterns 12, an org. film 14 is applied thereon by spin coating and these films are etched back under conditions under which the etching speeds of the phase shifter film 13 and the org. film 14 are equal. As a result, the phase shifter films 13' having the specified film thickness even near the edges of the light shielding film patterns 12 are obtd. |
