Method for diffusing a dopant into a semiconductor.

摘要

The invention relates to a method of manufacturing a semiconductor device whereby a dopant (4) is provided near a surface (2) of a semiconductor body (1) in a deposition step, after which in a diffusion step the dopant (4) is diffused into the semiconductor body (1) in that the semiconductor body (1) is kept at an elevated temperature for a certain period in a furnace (11) while a process gas (13) is being passed through the furnace (11), after which any oxide layer (8) formed on the surface (2) is removed. According to the invention, a hydrogen halide is added to the process gas (13). It is found then that the creation of lattice dislocations in semiconductor devices is reduced because impurities which play a part in the creation of lattice dislocations react with the hydrogen halide and are removed.