发明名称 |
Semiconductor memory device having a double-stacked capacitor structure |
摘要 |
A semiconductor memory device having a double-stacked capacitor, and methods for manufacturing the same, are disclosed. Such memory device has a first stacked capacitor and a second stacked capacitor, which are formed respectively over and below a bit line and run in parallel and are connected in order to increase the capacity of the capacitors and to prevent contact faults caused by a step occurring.
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申请公布号 |
US5315141(A) |
申请公布日期 |
1994.05.24 |
申请号 |
US19930122100 |
申请日期 |
1993.09.16 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM, JAE K. |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L29/94 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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