| 摘要 |
PURPOSE:To achieve electrode wiring with improved electro migration resistance by forming a recessed part with a specific pattern shape on a substrate surface, forming a metal film on a substrate where the recessed part is formed, and flocculating and isolating the metal film by heating and then burying it into the recessed part. CONSTITUTION:An Si single crystal 11 with face orientation (100) is used for a substrate and then a thermal oxide film 12 is formed on the Si substrate 11 with a thickness of 1mum. Then, a wiring pattern shaped groove 18 is formed using the light exposure method and the ion etching (PIE) method on the surface of the thermal oxide film. Then, Al thin film 19 is formed heating free on the thermal oxide film 12 by the AC magnetron sputtering method. Further, heat treatment using a halogen lamp is performed from the substrate rear surface for one minute within the same vacuum as the sputtering and Al is flocculated and buried into the groove. After this, Al remaining at a wide region where no wiring pattern is formed is eliminated by the resist etchback method. |
