| 摘要 |
PURPOSE:To obtain a manufacturing method of a TFT wherein a low concentration impurity region can be formed at an adequate position in a self-alignment manner with an easy means, and a TFT having stable LDO structure of high performance can be easily obtained by a small number of processes. CONSTITUTION:In the case of manufacturing a TFT having high concentration impurity introducing regions 11, 12 as the source and drain regions, and a low concentration impurity introducing region for forming LDO structure, the following are provided independently of order; a process wherein the high concentration impurity introducing regions 11, 12 are formed by implanting ions almost vertically to a thin film 1 into which impurities are to be introduced, and a process wherein the low concentration impurity introducing region 2 is formed by implanting ions obliquely to the thin film into which impurities are to be introduced. Thereby a TFT having LDO structure is obtained easily and adequately. |
