| 摘要 |
<p>PURPOSE:To improve yield by replacing a redudant memory cell array with the other memory cell array when the redundant memory cell array replaced at the time of redundance relieving is defective. CONSTITUTION:This device is provided with a defective address memory circuit 1 which stores a defective address and generates a signal selecting a redundant memory cell array 7 at the time of selecting a defective address and generates a signal 3 selecting a regular memory cell array 6 at the time of selecting a normal address, a memory circuit 2 which controls so that the redundant memory cell array 7 relating to the defective address memory circuit 1 can not be selected independently of the fact whether an address externally given coincides with an address stored in the defective address memory circuit 1 or not.</p> |
