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发明名称
Verfahren zum Herstellen integrierter Strukturen aus bipolaren und CMOS-Transistoren.
摘要
申请公布号
DE3886062(T2)
申请公布日期
1994.05.19
申请号
DE19883886062T
申请日期
1988.01.25
申请人
TEXAS INSTRUMENTS INC., DALLAS, TEX.
发明人
SHAH, RAJIV R., PLANO TEXAS 75075;TRAN, TOAN, DALLAS TEXAS 75228
分类号
H01L21/331;H01L21/8249;H01L27/06;H01L29/73;H01L29/732;(IPC1-7):H01L21/82;H01L21/285
主分类号
H01L21/331
代理机构
代理人
主权项
地址
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