发明名称 SEMICONDUCTOR IC DEVICE
摘要 The semiconductor integrated circuit includes a metal interconnection layer of a pull-down drive transistor which is coupled to a inner ground pad of a inner circuit of a chip, and is arranged to seperate from a metal interconnection layer which is coupled to a impurity region for the purpose of stabilization of the bulk voltage of the substrate, thereby solving the noise problem.
申请公布号 KR940004255(B1) 申请公布日期 1994.05.19
申请号 KR19910011908 申请日期 1991.07.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JO, SONG - HUI;LEE, HYONG - KON
分类号 H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/78
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