发明名称 |
SEMICONDUCTOR IC DEVICE |
摘要 |
The semiconductor integrated circuit includes a metal interconnection layer of a pull-down drive transistor which is coupled to a inner ground pad of a inner circuit of a chip, and is arranged to seperate from a metal interconnection layer which is coupled to a impurity region for the purpose of stabilization of the bulk voltage of the substrate, thereby solving the noise problem.
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申请公布号 |
KR940004255(B1) |
申请公布日期 |
1994.05.19 |
申请号 |
KR19910011908 |
申请日期 |
1991.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JO, SONG - HUI;LEE, HYONG - KON |
分类号 |
H01L21/78;(IPC1-7):H01L21/78 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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