A vertical PMP semiconductor device.

摘要

Disclosed are devices (30) having emitters (38) having resistive emitter diffusion sections (41) which are in a radial pattern. Such devices include vertical PNP power devices such as transistors. A radial pattern of holes (40) defines the resistive emitter diffusion sections between adjacent holes. The resistive emitter diffusion sections result in a lower emitter ballast resistance due to the higher emitter sheet resistance of PNP devices. This allows all the periphery of the emitter to be active, not just two sides. The device has improved emitter ballast resistance while at the same time remaining efficient with low saturation resistance. <IMAGE>