PATTERN FORMATION AND MASK

摘要

PURPOSE:To provide the pattern formation which can improve contrast while a subpeak is suppressed small in the transfer technology which uses a phase shift mask with a fine pattern of a super LSI, etc. CONSTITUTION:The pattern formation in which patterns which are arrayed at least in one direction are transferred by using a phase shift mask includes a process wherein exposure is performed by using a phase shift mask whose main hole 1 and phase shifters 2 and 3 on it are reduced size in the array direction of the patterns on the basis of a desired pattern as compared with those in other directions and a process wherein development is carried out at such a level that the light of interference between the phase shifter 2 and 3 is not developed.