发明名称 FERRODIELECTRIC MEMORY DEVICE
摘要 <p>PURPOSE:To obtain the ferrodielectric memory whose service life is extended by impressing a pulse whose pulse width is less than a critical pulse width restoring an initial polarization state to a capacitor, as an information read drive condition in which the dependency of a switching time (a time when a maximum value of a polarization inverting current reaches a value of a specific rate) on an electric field satisfies a specific equation. CONSTITUTION:The device is provided with a matrix cell 31 comprising ferrodielectric capacitors in which dependency of a switching time tsw on an electric field E satisfies an equation, a row changeover control section 32, a column changeover control section 33 and a changeover circuit 34 or the like. Then each cell 31 of the matrix memory is written in the polarization direction with an electric field larger than a counter electric field by a write circuit 35, and the row column changeover control sections 32, 33. In order to read information, the changeover circuit 34 is set to operate a read circuit 36. Furthermore, the row column changeover control sections 32, 33 are used to impress a rectangular and triangle wave pulse having a shorter pulse width than a critical pulse width t* at which the initial polarization state is restored, then the information stored with non-destruction is read.</p>
申请公布号 JPH06131866(A) 申请公布日期 1994.05.13
申请号 JP19920276144 申请日期 1992.10.14
申请人 OLYMPUS OPTICAL CO LTD 发明人 OMURA MASAYOSHI
分类号 G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C11/22
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