| 摘要 |
<p>PURPOSE:To prevent an organic film formed from remaining when chrome is used for a light-shielding film by forming a first film in the region of a light- transmissive part and forming a second resist film from the rear side of a substrate by using a light-shielding film as a mask. CONSTITUTION:A transparent thin film 2 consisting of SnO2 and the like is formed on a glass substrate 1 and a phase shifter 5 consisting of SiO2 is formed thereon. The light-shielding film 4 consisting of Cr or MoSi is formed on the phase shifter 5 and further, the resist film for an electron beam(EB) is formed and this specified area is irradiated with the electron beam. Next, the etching of the light-shielding film 4 is executed by using this resit film as a mask to form the light-transmissive part. After the EB resist film is removed, the EB resist film 7 is formed on the entire surface of the substrate and the specified region of the light-transmissive part on the light-shielding film 4 is irradiated with the electron beam. The developping of the EB resist film 7 is executed to obtain the first resist film 7. Next, an optical resist film 8 is formed on the entire surface of the substrate and ultraviolet rays are irradiated from the rear side of the substrate to develop the optical resist film 8.</p> |
