发明名称 |
Semiconductor memory device that uses a negative differential resistance |
摘要 |
A semiconductor memory device comprises a memory cell transistor that includes two active parts each including therein an emitter and a base and showing a negative differential resistance. The collector layer is shared commonly by the two active parts and is connected to a bit line, while the emitters forming the two active parts are connected to respective word lines that form a word line pair. The bit line and the word lines forming the word line pair are biased to realize a bistable operational state in the memory cell transistor to hold the information.
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申请公布号 |
US5311465(A) |
申请公布日期 |
1994.05.10 |
申请号 |
US19930020839 |
申请日期 |
1993.02.22 |
申请人 |
FUJITSU LIMITED |
发明人 |
MORI, TOSHIHIKO;YOKOYAMA, NAOKI |
分类号 |
H01L21/822;G11C11/39;H01L21/331;H01L21/8229;H01L27/04;H01L27/102;H01L29/73;H01L29/737;(IPC1-7):G11C11/40 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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