Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation

摘要

A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance.