| 摘要 |
<p>PURPOSE:To control crystallinity and to easily form two types of TFT by altering a process to a minimum limit by specifying a thickness of one active layer and a thickness of an active layer of the other thin film transistor in an integrated circuit having two polysilicon thin film transistors on the same substrate. CONSTITUTION:A first base oxide film 102 and a first amorphous silicon film 103 are deposited on a substrate 101. A second silicon oxide film 104 and a second amorphous silicon film 105 are deposited on the film 103. Then, a second silicon oxide film 107 and a second amorphous silicon 106 remains only on a peripheral circuit region, and the film 103 is exposed on the other region. An insular region 108 is formed on the exposed part, and crystallized by hot annealing at 450 deg.C. Thus, two types of TFT having a thickness of one active layer of 70nm or less and the other of 70nm or more can be formed.</p> |
