| 摘要 |
<p>PURPOSE:To provide a nonvolatile storage device which enables a larger number of times of rewriting, improves the writing speed, and reduces the power consumption. CONSTITUTION:Memory transistors 21A, 21B, 21C and 21D, wherein a source region 23, gate electrode 26 and ONO film with a specified interval D to obtain an offset region are formed in a virtual grand array on one silicon substrate 20. Word lines WL1 and WL2 are connected to the gate electrodes 26 on the memory transistors 21A, 21B, 21C and 21D disposed in the direction of row; bit lines BL1, BL2 and BL3 are connected to the source 23 and drain 24 regions, including regions common thereto, on the memory transistors 21A, 21C, 21B and 21D disposed in the direction of column.</p> |
