| 摘要 |
PURPOSE:To make a pattern of high resolution, by providing a resist film of a dicarboxylic acid diallyl ester polymer on a substrate, irradiating the film with ultraviolet ravs of a prescribed wavelength and developing the film. CONSTITUTION:A resist film of a dicarboxylic acid diallyl ester polymer is provided on a substrate. The film is irradiated with ultraviolet rays of 180-350nm in wavelength in accordance with a pattern. The film is then developed. The degree of dispersion of the polymer, which is the ratio of the weight-average molecular weight to the number-average molecular weight, is preferably 3 or less. For example, a diallyl phthalate polymer and a diallyl isophthalate polymer are disolved in a concentration of 20wt% in 2-ethoxyethyl acetate, thereby preparing a resist solution. This solution is coated on a thermally oxidized SiO2 film on a silicon substrate so that the thickness of the solution is 0.5mum and the coated film is treated with heat at 80 deg.C. The film is exposed to light from a heavy hydrogen lamp of 200W. The film is then developed by a developer which is a mixture consisting of monochlorobenzene and isoamyl acetate at 20 deg.C. |
