| 摘要 |
A vertical cavity of a rectangular shape having short and long sides (a,b) is defined between first and second mirror layers (2,4). Thus, two resonant wavelengths are obtained in a vertical-to-surface optical semiconductor device having the vertical cavity. The resonant wavelengths (950.0nm, 950.4nm) are shifted in an increasing wavelength direction due to the heat generated in operation of the optical semiconductor device to shifted wavelengths (950.4nm, 950.8nm). Light of the shifted short wavelength (950.4nm) emitted from the first optical semiconductor device has its plane of polarization rotated by 90 DEG , and is then received by the second optical semiconductor device as light of the non-shifted long wavelength . <IMAGE> |
