发明名称 Synchronous static random access memory
摘要 Maximum operating speed is achieved in an array of memory cells by performing both read and write operations within a single memory cycle. As outgoing data are read from the memory cells, incoming data are stored immediately in those cells. Once data are read from the memory cells, a latch signal is generated to trigger latching of the read data for output to a data bus. The same latch signal that is used to latch the read data initiates the writing of new data to the memory cells. Use of a single latch signal in this manner ensures that new data are not written to the memory cells until the existing data has been read from those cells.
申请公布号 US5309395(A) 申请公布日期 1994.05.03
申请号 US19920965127 申请日期 1992.10.22
申请人 AT&T BELL LABORATORIES 发明人 DICKINSON, ALEXANDER G.;HATAMIAN, MEHDI;RAO, SAILESH K.
分类号 G11C11/413;G11C11/417;G11C11/419;H04L12/56;H04Q11/04;(IPC1-7):G11C7/00 主分类号 G11C11/413
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