| 摘要 |
PURPOSE:To make integration possible without damaging the characteristics of an electrostatic induction transistor, by mounting the electrostatic induction transistor and a vertical bipolar transistor to epitaxial layers separated at V-shaped concave portions on the same semiconductor substrate. CONSTITUTION:An n<->-type epitaxial layer 3 is grown on a p-type substrate 1 through an n<+>-type buried layer 2. The first and second V-shaped concave portions 5, 6, which pierce the buried layer and reach the substrate, are installed by means of aeolotropy etching, and the third, shallow, V-shaped, concave portions 7 are disposed on a surface of the epitaxial layer at the electrostatic induction transistor side. A p<+>-type base 8 is mounted to the eqitaxial layer at the bipolar side, and p<+>-type gates 9 are installed to the inner surfaces of the concave portions 7. An n<+>-type emitter 11, an n<+>-type drain 10 and an n<+>-type source 12 and a collector 13 are installed to the inside of the base 8, a portion surrounded by the gate and the inner surfaces of the second concave portions, thus completing the electrostatic induction transistor A and a bipolar transistor B. |
