| 摘要 |
PURPOSE:To obtain an interface of high reliability between an insulating film and a semiconductor, by forming an insulating film subjected to sintering process by using hydrogen active seeds which are not accompanied by plasma. CONSTITUTION:This semiconductor device is provided with insulating films 25, 26 subjected to sintering process by using hydrogen active seeds which are not accompanied by plasma. The hydrogen active seeds preferably formed by bringing hydrogen gas or hydrogen containing gas into contact with nickel or nickel containing material heated at 300 deg.C or higher. The insulating films 25, 26 are silicon oxide films, which are preferably turned into the gate oxide film, or the interlayer insulating film of MOS. For example, after oxide films are formed by thermal oxidation in silicide layers 21-24, N<+> regions 17, 18, P<+> regions 19, 20, a P<-> region 14 and an N<-> region 15 which are exposed in contact holes, the gate insulating films 25, 26 of a CMOS in a semiconductor device are formed by performing sintering process using hydrogen active seeds at 300 deg.C. |
