| 摘要 |
PURPOSE:To easily mount a plurality of semiconductor substrates differing in the electric potential of loading surfaces on a metal substrate satisfactory in heat-dissipating properties by covering the whole surface of the substrate side of the plurality of semiconductor substrates with an insulating film and by covering the central part of the insulating film with a metal film having a surface satisfactory in brazing properties. CONSTITUTION:The whole surface of the substrate 1 side of a plurality of semiconductor substrates is covered with an insulating film 4 composed of silicon oxide and the central part of the insulating film 4, with a metal film (multilayer metal film of which the first layer is Al film) having a surface satisfactory in brazing. Further, the outer peripheral part of the surface to be covered with the insulating film 4 of a semiconductor substrate is made lower than the central part of the surface. In this case, the outer peripheral part of the semiconductor substrate is lowered stepwise or by an inclined surface. Thus, the plurality of semiconductor substrates differing in the electric potential of loading surfaces can be easily mounted on a metal substrate satisfactory in heat-dissipating properties by brazing.
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