| 摘要 |
PURPOSE:To form fine wiring of sufficient film thickness, by forming a side wall for restraining lateral growth when a second wiring material layer is selectively grown on a first wiring material layer patterned in the wiring form. CONSTITUTION:A two-layered film composed of a first wiring material layer 3A and a semiconductor material layer 4 is formed on a semiconductor substrate 1 via a first insulating film 2, and patterned in a desired wiring formed. A second insulating film is formed on the whole surface, and etched back until the surface of the two-layered film appears, thereby forming a side wall 5 composed of the second insulating film, on the side wall of the two-layered film. After only the semiconductor material layer 4 of the two-layered film on which the side wall 5 is formed is etched and eliminated, a second wiring material layer 3B is selectively grown on the surface of the exposed first wiring material layer 3A. For example, the first wiring material and the second wiring material are aluminum or aluminum alloy.
|
