发明名称 |
Synchronous static random access memory. |
摘要 |
<p>Maximum operating speed is achieved in an array of memory cells by performing both read and write operations within a single memory cycle. As outgoing data are read from the memory cells, incoming data are stored immediately in those cells. Once data are read from the memory cells, a latch signal is generated (in 32) to trigger latching (in 34) of the read data for output to a data bus (14). The same latch signal that is used to latch the read data initiates (in 36) the writing of new data to the memory cells. Use of a single latch signal in this manner ensures that new data are not written to the memory cells until the existing data has been read from those cells. <IMAGE></p> |
申请公布号 |
EP0594347(A2) |
申请公布日期 |
1994.04.27 |
申请号 |
EP19930308142 |
申请日期 |
1993.10.13 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
DICKINSON,ALEXANDER G.;HATAMIAN, MEHDI;RAO, SAILESH KRISHNA |
分类号 |
G11C11/413;G11C11/417;G11C11/419;H04L12/56;H04Q11/04;(IPC1-7):G11C11/419 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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