| 摘要 |
PURPOSE:To enable a MOS transistor having LDD characteristics in a simple structure to be manufactured without an increase in the number of steps by forming a low doped region in a semiconductor film part between an end of a gate electrode and a source or a drain by utilizing a difference in thickness between a gate insulating film and a thin insulating film. CONSTITUTION:For manufacture of a MOS transistor, a semiconductor film 2 which constitutes the channel part of the transistor is formed and overlaid with a gate insulating film 3. After the gate insulating film 3 is overlaid with a gate electrode material 4, a gate electrode 5 is patterned, and at the same time with this patterning, the gate insulating film 3 is partially etched off to form an insulating film 7 thinner than the gate insulating film 3. After a further etching such that the gate electrode 5 may be narrowed in the channel width direction, a gate electrode 8 is used as the mask to introduce dopants. For example, low dopants are introduced into a semiconductor film 2 in a thick part of a gate insulating film 9.
|
