| 摘要 |
A process and structure for improving the conductive capacity of a polycrystalline silicon (poly) structure, such as a bit line. The inventive process allows for the formation of a refractory metal silicide layer on the top and sidewalls of a poly structure, thereby increasing the conductive capacity. To form the titanium silicide layer over the poly feature, the refractory metal is sputtered on the poly, which reacts to form the refractory metal silicide. A second embodiment is described whereby an isotropic etch of the poly feature slopes the sidewalls; then, the refractory metal is sputtered onto the polycrystalline silicon. This allows for the formation of a thicker layer of refractory metal silicide on the sidewalls, thereby further increasing the conductive capacitance of the poly structure. Suggested refractory metals include titanium, cobalt, tungsten, and tantalum.
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